N-Channel Power MOSFET, 100V Vds, 75A continuous drain current, and 25mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220 package for through-hole mounting. Operating temperature range is -55°C to 175°C with a maximum power dissipation of 360W. Key switching characteristics include a 27ns turn-on delay and 45ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTP75N10P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP75N10P Datasheet
Download the complete datasheet for Ixys IXTP75N10P to view detailed technical specifications.
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