
The IXTP76N075T is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 75V and a Continuous Drain Current of 76A. It features a TO-220AB package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The IXTP76N075T has a maximum power dissipation of 176W and a fall time of 33ns.
Ixys IXTP76N075T technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 33ns |
| Input Capacitance | 2.58nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 176W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 176W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 38ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTP76N075T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
