P-Channel MOSFET, TO-220 package, featuring 100V drain-source breakdown voltage and 76A continuous drain current. Offers low on-resistance of 24mΩ, 298W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. This through-hole mounted component boasts a 13.7nF input capacitance and is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityP-CHANNEL
Power298W
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Technical Specifications
Ixys IXTP76P10T technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 13.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP76P10T Datasheet
Download the complete datasheet for Ixys IXTP76P10T to view detailed technical specifications.
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