Ixys
IXTP7N60PM
Power Field-Effect Transistor, 4A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, ISOLATED TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power41W
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Technical Specifications
Ixys IXTP7N60PM technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
600V
Fall Time
26ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.18nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
41W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
41W
Rds On Max
1.1R
RoHS Compliant
Yes
Series
Polar™
Turn-Off Delay Time
65ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP7N60PM Datasheet
Download the complete datasheet for Ixys IXTP7N60PM to view detailed technical specifications.
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