The IXTP8N50P is a N-Channel MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 8A. It features a TO-220AB package and is designed for through hole mounting. The device has a maximum operating temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXTP8N50P has a maximum power dissipation of 150W and a fall time of 23ns.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP8N50P technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP8N50P Datasheet
Download the complete datasheet for Ixys IXTP8N50P to view detailed technical specifications.
No datasheet is available for this part.