Ixys
IXTP90N15T
Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power455W
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Technical Specifications
Ixys IXTP90N15T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
150V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
4.1nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
455W
Mount
Through Hole
Package Quantity
50
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
455W
Rds On Max
20mR
RoHS Compliant
Yes
Turn-Off Delay Time
44ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP90N15T Datasheet
Download the complete datasheet for Ixys IXTP90N15T to view detailed technical specifications.
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