P-channel MOSFET featuring 85V drain-source voltage and 96A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.013 ohm drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 298W. Key switching characteristics include a 34ns fall time, 23ns turn-on delay, and 45ns turn-off delay.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTP96P085T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
96A
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
85V
Fall Time
34ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
13.1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
298W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
13mR
RoHS Compliant
Yes
Series
TrenchP™
Turn-Off Delay Time
45ns
Turn-On Delay Time
23ns
Weight
0.08113oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP96P085T Datasheet
Download the complete datasheet for Ixys IXTP96P085T to view detailed technical specifications.
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