IXYS

IXTP96P085T

Datasheet

P-Channel MOSFET, 96A ID, 85V Vdss, 13mR Rds(on), TO-220AB

Ixys

IXTP96P085T

Name: IXTP96P085T Ixys
Brand: Ixys
SKU: IXTP96P085T

P-Channel MOSFET, 96A ID, 85V Vdss, 13mR Rds(on), TO-220AB

P-channel MOSFET featuring 85V drain-source voltage and 96A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.013 ohm drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 298W. Key switching characteristics include a 34ns fall time, 23ns turn-on delay, and 45ns turn-off delay.

PackageTO-220AB

MountingThrough Hole

PolarityP-CHANNEL

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Technical Specifications

Ixys IXTP96P085T technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	96A
Drain to Source Resistance	13mR
Drain to Source Voltage (Vdss)	85V
Fall Time	34ns
Gate to Source Voltage (Vgs)	10V
Input Capacitance	13.1nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	298W
Mount	Through Hole
Number of Channels	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	P-CHANNEL
Rds On Max	13mR
RoHS Compliant	Yes
Series	TrenchP™
Turn-Off Delay Time	45ns
Turn-On Delay Time	23ns
Weight	0.08113oz