The Ixys IXTQ10P50P is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 300W and is packaged in a TO-3P, 3 PIN plastic package. The device is RoHS compliant and lead free. It features a drain to source breakdown voltage of -500V and a drain to source resistance of 1R.
MountingThrough Hole
PolarityP-CHANNEL
Power300W
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Technical Specifications
Ixys IXTQ10P50P technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ10P50P Datasheet
Download the complete datasheet for Ixys IXTQ10P50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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