The Ixys IXTQ160N085T is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 160A and a drain to source breakdown voltage of 85V. The device also features a drain to source resistance of 6mR and a maximum power dissipation of 360W. The IXTQ160N085T is packaged in a flange mount, R-PSFM-T3 package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTQ160N085T technical specifications.
General
| Continuous Drain Current (ID) | 160A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ160N085T Datasheet
Download the complete datasheet for Ixys IXTQ160N085T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.