IXTQ160N10T

Name: IXTQ160N10T Ixys
Brand: Ixys
SKU: IXTQ160N10T

Power Field-Effect Transistor, 160A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3PIN

MountingThrough Hole

PolarityN-CHANNEL

Power430W

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Ixys IXTQ160N10T technical specifications.

Continuous Drain Current (ID)	160A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	7mR
Drain to Source Voltage (Vdss)	100V
Fall Time	42ns
Input Capacitance	6.6nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	430W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	430W
Rds On Max	7mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	49ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.