The IXTQ220N055T is a high-power N-channel transistor with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 430W and a drain to source breakdown voltage of 55V. The device has a continuous drain current of 220A and a drain to source resistance of 4mR. It is packaged in a through-hole configuration and is compliant with RoHS regulations.
MountingThrough Hole
PolarityN-CHANNEL
Power430W
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Technical Specifications
Ixys IXTQ220N055T technical specifications.
General
| Continuous Drain Current (ID) | 220A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 53ns |
| Input Capacitance | 7.2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 430W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 430W |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 53ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ220N055T Datasheet
Download the complete datasheet for Ixys IXTQ220N055T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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