The IXTQ230N085T is a high-power N-channel MOSFET with a continuous drain current of 230A and a drain to source breakdown voltage of 85V. It features a drain to source resistance of 4.4mR and a maximum power dissipation of 550W. The device is packaged in a flange mount, R-PSFM-T3 package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
MountingThrough Hole
PolarityN-CHANNEL
Power550W
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Technical Specifications
Ixys IXTQ230N085T technical specifications.
General
| Continuous Drain Current (ID) | 230A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 39ns |
| Input Capacitance | 9.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 550W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 550W |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ230N085T Datasheet
Download the complete datasheet for Ixys IXTQ230N085T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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