The IXTQ26N50P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 26A. The device has a maximum power dissipation of 400W and is packaged in a TO-3P, 3 PIN configuration. The IXTQ26N50P is RoHS compliant and lead free.
Current Rating26A
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXTQ26N50P technical specifications.
General
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 58ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ26N50P Datasheet
Download the complete datasheet for Ixys IXTQ26N50P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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