The Ixys IXTQ30N50L2 is a 30A 500V N-Channel MOSFET with a maximum power dissipation of 400W. It has a nominal Vgs of 2.5V and a maximum Rds on of 200mR. The device is packaged in a TO-3P 3-Pin package and is available in quantities of 30. The IXTQ30N50L2 is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
MountingThrough Hole
Power400W
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Technical Specifications
Ixys IXTQ30N50L2 technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 8.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ30N50L2 Datasheet
Download the complete datasheet for Ixys IXTQ30N50L2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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