The Ixys IXTQ40N50Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 40A and a drain to source breakdown voltage of 500V. The device has a drain to source resistance of 160mR and a maximum power dissipation of 500W. It is packaged in a TO-3P, 3 PIN package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXTQ40N50Q technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ40N50Q Datasheet
Download the complete datasheet for Ixys IXTQ40N50Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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