The Ixys IXTQ470P2 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 42A. The device has a maximum power dissipation of 830W and is packaged in a TO-3P plastic package. The IXTQ470P2 is lead-free and RoHS compliant, making it suitable for a wide range of applications.
MountingThrough Hole
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXTQ470P2 technical specifications.
General
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 145mR |
| RoHS Compliant | Yes |
| Series | PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ470P2 Datasheet
Download the complete datasheet for Ixys IXTQ470P2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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