The IXTQ480P2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 52A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-3P plastic package and is available in a rail/Tube packaging format. The IXTQ480P2 is RoHS compliant and features a maximum power dissipation of 960W.
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXTQ480P2 technical specifications.
General
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 6.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ480P2 Datasheet
Download the complete datasheet for Ixys IXTQ480P2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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