The Ixys IXTQ50N20P is an N-channel MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 50A. It features a drain to source resistance of 60mR and a maximum power dissipation of 360W. The device is packaged in a TO-3P, 3 PIN package and is suitable for through hole mounting. The operating temperature range is from -55°C to 175°C, and it is compliant with RoHS regulations.
MountingThrough Hole
PolarityN-CHANNEL
Power360W
Quick Jump:
Technical Specifications
Ixys IXTQ50N20P technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.72nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ50N20P Datasheet
Download the complete datasheet for Ixys IXTQ50N20P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
