The IXTQ60N20L2 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 60A. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 540W. The device is packaged in a TO-3P package and is mounted through a hole. It is compliant with RoHS regulations and is part of the Linear L2 series.
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Ixys IXTQ60N20L2 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 10.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ60N20L2 Datasheet
Download the complete datasheet for Ixys IXTQ60N20L2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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