IXTQ60N20L2

Name: IXTQ60N20L2 Ixys
Brand: Ixys
SKU: IXTQ60N20L2

Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

MountingThrough Hole

PolarityN-CHANNEL

Power540W

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Ixys IXTQ60N20L2 technical specifications.

Continuous Drain Current (ID)	60A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	45mR
Drain to Source Voltage (Vdss)	200V
Input Capacitance	10.5nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	540W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	540W
Rds On Max	45mR
RoHS Compliant	Yes
Series	Linear L2™
Turn-Off Delay Time	90ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.