The Ixys IXTQ96N20P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 96A and a drain to source breakdown voltage of 200V. The device has a drain to source resistance of 24mR and a maximum power dissipation of 600W. It is packaged in a TO-3P, 3 PIN package and is lead free and RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXTQ96N20P technical specifications.
General
| Continuous Drain Current (ID) | 96A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTQ96N20P Datasheet
Download the complete datasheet for Ixys IXTQ96N20P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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