IXTR16P60P

Power Field-Effect Transistor, 10A I(D), 600V, 0.79ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

MountingThrough Hole

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Ixys IXTR16P60P technical specifications.

Continuous Drain Current (ID)

10A

Drain to Source Voltage (Vdss)

600V

Input Capacitance

5.12nF

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

190W

Mount

Through Hole

Package Quantity

Packaging

Rail/Tube

Rds On Max

790mR

RoHS Compliant

Yes

Series

PolarP™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.