P-channel power MOSFET featuring 100V drain-to-source voltage and 108A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 13mΩ Rds On Max and a maximum power dissipation of 312W. Designed for through-hole mounting, it includes a 12.6nF input capacitance and is RoHS compliant and lead-free.
MountingThrough Hole
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Technical Specifications
Ixys IXTR170P10P technical specifications.
General
| Continuous Drain Current (ID) | 108A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 12.6nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTR170P10P Datasheet
Download the complete datasheet for Ixys IXTR170P10P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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