Ixys
IXTT110N10L2
Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXTT110N10L2 technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
100V
Fall Time
24ns
Input Capacitance
10.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600W
Mount
Surface Mount
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
600W
Rds On Max
18mR
RoHS Compliant
Yes
Series
Linear L2™
Turn-Off Delay Time
99ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT110N10L2 Datasheet
Download the complete datasheet for Ixys IXTT110N10L2 to view detailed technical specifications.
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