
The Ixys IXTT16N20D2 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 200V and a continuous drain current of 16A. The device features a maximum power dissipation of 695W and a gate to source voltage of 20V. It is lead free and RoHS compliant.
Ixys IXTT16N20D2 technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 73mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 135ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 695W |
| Rds On Max | 73mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 270ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTT16N20D2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
