Ixys
IXTT1N100
Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Ixys IXTT1N100 technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
1.5A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
11R
Drain to Source Voltage (Vdss)
1kV
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
480pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Rds On Max
11R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT1N100 Datasheet
Download the complete datasheet for Ixys IXTT1N100 to view detailed technical specifications.
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