N-channel Power MOSFET, Metal-oxide Semiconductor FET, featuring a high Drain to Source Breakdown Voltage of 4.5kV. This surface mount component offers a continuous drain current of 1A and a low Rds On Max of 85 Ohms. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 520W. Key switching characteristics include a fall time of 127ns and a turn-off delay time of 58ns, with an input capacitance of 1.73nF. This RoHS compliant and Lead Free component is supplied in a TO-268-3 package.
PackageTO-268-3
MountingSurface Mount
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXTT1N450HV technical specifications.
General
| Package/Case | TO-268-3 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 4.5kV |
| Drain to Source Resistance | 85R |
| Drain to Source Voltage (Vdss) | 4.5kV |
| Fall Time | 127ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.73nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 85R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 58ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT1N450HV Datasheet
Download the complete datasheet for Ixys IXTT1N450HV to view detailed technical specifications.
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