The IXTT24N50Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 24A. The device has a maximum power dissipation of 360W and a gate to source voltage of 30V. It is packaged in a TO-268 surface mount package and is RoHS compliant.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTT24N50Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT24N50Q Datasheet
Download the complete datasheet for Ixys IXTT24N50Q to view detailed technical specifications.
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