Ixys
IXTT26N60P
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
Current Rating26A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTT26N60P technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
26A
Current Rating
26A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
600V
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
4.15nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460W
Mount
Surface Mount
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
460W
Rds On Max
270mR
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
75ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT26N60P Datasheet
Download the complete datasheet for Ixys IXTT26N60P to view detailed technical specifications.
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