Ixys
IXTT30N60L2
Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
Quick Jump:
Technical Specifications
Ixys IXTT30N60L2 technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
600V
Input Capacitance
10.7nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540W
Mount
Surface Mount
Package Quantity
30
Packaging
Rail/Tube
Rds On Max
240mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Linear L2™
Threshold Voltage
2.5V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT30N60L2 Datasheet
Download the complete datasheet for Ixys IXTT30N60L2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
