The Ixys IXTT48P20P is a P-channel MOSFET with a maximum drain current of 48A and a breakdown voltage of -200V. It features a drain to source resistance of 85mR and a gate to source voltage of 20V. The device is packaged in a TO-268 plastic package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-268
MountingSurface Mount
PolarityP-CHANNEL
Power462W
Quick Jump:
Technical Specifications
Ixys IXTT48P20P technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 85MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 462W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 462W |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
| Turn-Off Delay Time | 67ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT48P20P Datasheet
Download the complete datasheet for Ixys IXTT48P20P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
