N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 80A Continuous Drain Current (ID). Features low on-resistance of 32mΩ (Rds On Max) and high power dissipation up to 520W. This silicon Metal-oxide Semiconductor FET is housed in a TO-268 package for surface mounting. Operating temperature range spans from -55°C to 150°C. Lead-free and RoHS compliant.
PackageTO-268
MountingSurface Mount
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Technical Specifications
Ixys IXTT80N20L technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 6.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Series | Linear™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT80N20L Datasheet
Download the complete datasheet for Ixys IXTT80N20L to view detailed technical specifications.
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