IXTT82N25P

Power Field-Effect Transistor, 82A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

PackageTO-268

MountingSurface Mount

PolarityN-CHANNEL

Power500W

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Ixys IXTT82N25P technical specifications.

Package/Case	TO-268
Continuous Drain Current (ID)	82A
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	35mR
Drain to Source Voltage (Vdss)	250V
Fall Time	22ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.8nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500W
Mount	Surface Mount
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	500W
Rds On Max	35mR
RoHS Compliant	Yes
Series	PolarHT™
Turn-Off Delay Time	78ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.