Ixys
IXTT88N15
Power Field-Effect Transistor, 88A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power400W
Quick Jump:
Technical Specifications
Ixys IXTT88N15 technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
88A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
150V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
400W
Radiation Hardening
No
Rds On Max
22mR
RoHS Compliant
Yes
Turn-Off Delay Time
80ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT88N15 Datasheet
Download the complete datasheet for Ixys IXTT88N15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
