IXTU01N100

Power Field-Effect Transistor, 0.1A I(D), 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN

PackageTO-251

Current Rating100mA

MountingThrough Hole

PolarityN-CHANNEL

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Ixys IXTU01N100 technical specifications.

Package/Case	TO-251
Continuous Drain Current (ID)	100mA
Current Rating	100mA
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	80R
Drain to Source Voltage (Vdss)	1kV
Fall Time	28ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	54pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	25W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	25W
Rds On Max	80R
RoHS Compliant	Yes
Turn-Off Delay Time	28ns
DC Rated Voltage	1kV