The IXTU01N100D is a high-voltage N-channel MOSFET with a breakdown voltage of 1kV and a continuous drain current of 100mA. It features a low on-resistance of 80R and a fast switching time with a fall time of 6ns. The device is packaged in a TO-251AA, 3 PIN package and is suitable for high-power applications with a maximum power dissipation of 25W. The operating temperature range is from -55°C to 150°C, and the device is compliant with RoHS regulations.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Ixys IXTU01N100D technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 80R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 80R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTU01N100D Datasheet
Download the complete datasheet for Ixys IXTU01N100D to view detailed technical specifications.
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