IXTU05N100

Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3

PackageTO-251

MountingThrough Hole

PolarityN-CHANNEL

Power40W

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Ixys IXTU05N100 technical specifications.

Package/Case	TO-251
Continuous Drain Current (ID)	750mA
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	17R
Drain to Source Voltage (Vdss)	1kV
Gate to Source Voltage (Vgs)	30V
Input Capacitance	260pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	40W
Mount	Through Hole
Polarity	N-CHANNEL
Power Dissipation	40W
Rds On Max	17R
RoHS Compliant	Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.