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Technical Specifications
Ixys IXTV02N250 technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 2500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2A |
| Maximum Drain Source Resistance | 450000@10VmOhm |
| Typical Gate Charge @ Vgs | 6.6@10VnC |
| Typical Gate Charge @ 10V | 6.6nC |
| Typical Input Capacitance @ Vds | 120@25VpF |
| Maximum Power Dissipation | 57000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6D7E2 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Ixys IXTV02N250 Datasheet
Download the complete datasheet for Ixys IXTV02N250 to view detailed technical specifications.
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