N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 22A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Rds On resistance and a maximum power dissipation of 350W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 21ns fall time and 75ns turn-off delay. The component is RoHS compliant and lead-free.
PackageSMD/SMT
Current Rating22A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTV22N50PS technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTV22N50PS Datasheet
Download the complete datasheet for Ixys IXTV22N50PS to view detailed technical specifications.
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