P-channel MOSFET, 500V drain-source voltage, 40A continuous drain current, and 230mΩ maximum Rds(on). This silicon, metal-oxide semiconductor field-effect transistor features a 1-element design within a TO-247-3 package for through-hole mounting. It offers a maximum power dissipation of 890W and an input capacitance of 11.5nF. The component is lead-free, RoHS compliant, and supplied in rail/tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXTX40P50P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 11.5nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 230mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTX40P50P Datasheet
Download the complete datasheet for Ixys IXTX40P50P to view detailed technical specifications.
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