IXTY01N100

N-Channel Power MOSFET, 1000V Drain-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 80 Ohm Drain-Source On-Resistance (Rds On Max). This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a TO-252AA surface-mount package, 25W maximum power dissipation, and a 28ns fall time. Operating temperature range is -55°C to 150°C, with a 20V Gate-to-Source Voltage (Vgs) and 54pF input capacitance. RoHS compliant and lead-free.