N-channel silicon MOSFET for power applications. Features 1000V drain-source breakdown voltage and 100mA continuous drain current. Offers low 110-ohm drain-source on-resistance. Designed for surface mounting in a TO-252 package. Operates from -55°C to 150°C with a maximum power dissipation of 25W.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Ixys IXTY01N100D technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 80R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 110R |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 110R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY01N100D Datasheet
Download the complete datasheet for Ixys IXTY01N100D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
