N-channel silicon MOSFET for power applications. Features 1000V drain-source breakdown voltage and 100mA continuous drain current. Offers low 110-ohm drain-source on-resistance. Designed for surface mounting in a TO-252 package. Operates from -55°C to 150°C with a maximum power dissipation of 25W.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Ixys IXTY01N100D technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
100mA
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
80R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
110R
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
120pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
110R
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY01N100D Datasheet
Download the complete datasheet for Ixys IXTY01N100D to view detailed technical specifications.
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