IXTY01N80

Name: IXTY01N80 Ixys
Brand: Ixys
SKU: IXTY01N80

Power Field-Effect Transistor, 0.1A I(D), 800V, 50ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

PackageTO-252AA

MountingSurface Mount

PolarityN-CHANNEL

Power25W

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Ixys IXTY01N80 technical specifications.

Package/Case	TO-252AA
Continuous Drain Current (ID)	100mA
Drain to Source Breakdown Voltage	800V
Drain to Source Resistance	50R
Drain to Source Voltage (Vdss)	800V
Fall Time	28ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	60pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	25W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	25W
Rds On Max	50R
RoHS Compliant	Yes
Turn-Off Delay Time	28ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.