N-Channel Power MOSFET, 1200V Drain to Source Breakdown Voltage, 200mA Continuous Drain Current, and 0.075ohm Drain to Source Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 package for surface mounting. It operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 33W. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power33W
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Technical Specifications
Ixys IXTY02N120P technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 75R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 104pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 75R |
| RoHS Compliant | Yes |
| Series | Polar™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY02N120P Datasheet
Download the complete datasheet for Ixys IXTY02N120P to view detailed technical specifications.
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