IXTY08N100D2

Power Field-Effect Transistor, 21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC PACKAGE-3

PackageTO-252-3

MountingSurface Mount

Quick Jump:

Ixys IXTY08N100D2 technical specifications.

Package/Case

TO-252-3

Continuous Drain Current (ID)

800mA

Drain to Source Voltage (Vdss)

1kV

Drain-source On Resistance-Max

21R

Input Capacitance

325pF

Lead Free

Max Power Dissipation

60W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

21R

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.