N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 800mA Continuous Drain Current (ID). Features 4.6Ω maximum on-resistance (Rds On Max) and 60W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-252 plastic package for surface mounting. Includes 312pF input capacitance and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
Power60W
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Technical Specifications
Ixys IXTY08N50D2 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
800mA
Drain to Source Voltage (Vdss)
500V
Input Capacitance
312pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
4.6R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY08N50D2 Datasheet
Download the complete datasheet for Ixys IXTY08N50D2 to view detailed technical specifications.
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