N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss) and 800mA Continuous Drain Current (ID). Features 4.6Ω maximum on-resistance (Rds On Max) and 60W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-252 plastic package for surface mounting. Includes 312pF input capacitance and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
Power60W
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Technical Specifications
Ixys IXTY08N50D2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 312pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 4.6R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY08N50D2 Datasheet
Download the complete datasheet for Ixys IXTY08N50D2 to view detailed technical specifications.
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