Ixys
IXTY18P10T
Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
PackageTO-252
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTY18P10T technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
18A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
100V
Fall Time
22ns
Gate to Source Voltage (Vgs)
15V
Input Capacitance
2.1nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Package Quantity
70
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
120mR
RoHS Compliant
Yes
Series
TrenchP™
Turn-Off Delay Time
44ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY18P10T Datasheet
Download the complete datasheet for Ixys IXTY18P10T to view detailed technical specifications.
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