N-Channel Power MOSFET, 600V Vds, 1.4A Continuous Drain Current, 9 Ohm Rds On. Features include 16ns fall time, 25ns turn-off delay, 140pF input capacitance, and 50W max power dissipation. This silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C and is housed in a TO-252AA surface-mount package. RoHS compliant and lead-free.
PackageTO-252AA
Current Rating1.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTY1R4N60P technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY1R4N60P Datasheet
Download the complete datasheet for Ixys IXTY1R4N60P to view detailed technical specifications.
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