N-channel power MOSFET featuring 1000V drain-source voltage and 1.6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 10 ohms and a power dissipation of 100W. Designed for surface mounting, it utilizes a TO-252-3 package and has an input capacitance of 645pF. The component is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXTY1R6N100D2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 645pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Rds On Max | 10R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY1R6N100D2 Datasheet
Download the complete datasheet for Ixys IXTY1R6N100D2 to view detailed technical specifications.
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