N-channel power MOSFET featuring 1000V drain-source voltage and 1.6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 10 ohms and a power dissipation of 100W. Designed for surface mounting, it utilizes a TO-252-3 package and has an input capacitance of 645pF. The component is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXTY1R6N100D2 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.6A
Drain to Source Voltage (Vdss)
1kV
Input Capacitance
645pF
Lead Free
Lead Free
Max Power Dissipation
100W
Mount
Surface Mount
Package Quantity
70
Packaging
Rail/Tube
Rds On Max
10R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY1R6N100D2 Datasheet
Download the complete datasheet for Ixys IXTY1R6N100D2 to view detailed technical specifications.
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