Ixys
IXTY1R6N50P
Power Field-Effect Transistor, 1.6A I(D), 500V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
PackageTO-252-3
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTY1R6N50P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.6A
Current Rating
1A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
6.5R
Drain to Source Voltage (Vdss)
500V
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
140pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Surface Mount
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
43W
Rds On Max
6.5R
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
45ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY1R6N50P Datasheet
Download the complete datasheet for Ixys IXTY1R6N50P to view detailed technical specifications.
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