Ixys
IXTY2N100P
Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power86W
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Technical Specifications
Ixys IXTY2N100P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
1kV
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
655pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
86W
Mount
Surface Mount
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
86W
Rds On Max
7.5R
RoHS Compliant
Yes
Series
Polar™
Turn-Off Delay Time
80ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY2N100P Datasheet
Download the complete datasheet for Ixys IXTY2N100P to view detailed technical specifications.
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